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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDS3612
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5597185FDS3612 ImageAMI Semiconductor / ON Semiconductor

FDS3612

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Specifications
  • Part Number
    FDS3612
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 100V 3.4A 8SOIC
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FDS3612.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    8-SO
  • Series
    PowerTrench®
  • Rds On (Max) @ Id, Vgs
    120 mOhm @ 3.4A, 10V
  • Power Dissipation (Max)
    2.5W (Ta)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    8-SOIC (0.154", 3.90mm Width)
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    632pF @ 50V
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    6V, 10V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    N-Channel 100V 3.4A (Ta) 2.5W (Ta) Surface Mount 8-SO
  • Current - Continuous Drain (Id) @ 25°C
    3.4A (Ta)

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