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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > FDS3601
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6384736FDS3601 ImageAMI Semiconductor / ON Semiconductor

FDS3601

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Specifications
  • Part Number
    FDS3601
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET 2N-CH 100V 1.3A 8SOIC
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FDS3601.pdf
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Supplier Device Package
    8-SO
  • Series
    PowerTrench®
  • Rds On (Max) @ Id, Vgs
    480 mOhm @ 1.3A, 10V
  • Power - Max
    900mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    8-SOIC (0.154", 3.90mm Width)
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    153pF @ 50V
  • Gate Charge (Qg) (Max) @ Vgs
    5nC @ 10V
  • FET Type
    2 N-Channel (Dual)
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    Mosfet Array 2 N-Channel (Dual) 100V 1.3A 900mW Surface Mount 8-SO
  • Current - Continuous Drain (Id) @ 25°C
    1.3A

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