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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDS6162N3
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3987448FDS6162N3 ImageAMI Semiconductor / ON Semiconductor

FDS6162N3

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Specifications
  • Part Number
    FDS6162N3
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 20V 21A 8-SOIC
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FDS6162N3.pdf
  • Vgs(th) (Max) @ Id
    1.5V @ 250µA
  • Vgs (Max)
    ±12V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    8-SO
  • Series
    PowerTrench®
  • Rds On (Max) @ Id, Vgs
    4.5 mOhm @ 21A, 4.5V
  • Power Dissipation (Max)
    3W (Ta)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    8-SOIC (0.154", 3.90mm Width)
  • Other Names
    FDS6162N3_NL
    FDS6162N3_NLTR
    FDS6162N3_NLTR-ND
    FDS6162N3TR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    5521pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    73nC @ 4.5V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    2.5V, 4.5V
  • Drain to Source Voltage (Vdss)
    20V
  • Detailed Description
    N-Channel 20V 21A (Ta) 3W (Ta) Surface Mount 8-SO
  • Current - Continuous Drain (Id) @ 25°C
    21A (Ta)

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