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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDS6675

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1106816

AMI Semiconductor / ON Semiconductor

FDS6675

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Reference Price(In US Dollars)

In stock

1+

$1.82

10+

$1.64

100+

$1.318

500+

$1.025

1000+

$0.849

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Specifications

Part Number

FDS6675
Manufacturer/Brand

AMI Semiconductor/onsemi
Stock Quantity

In stock
Description

MOSFET P-CH 30V 11A 8-SOIC
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Datasheets

FDS6675.pdf
Vgs(th) (Max) @ Id

3V @ 250µA
Vgs (Max)

±20V
Technology

MOSFET (Metal Oxide)
Supplier Device Package

8-SO
Series

PowerTrench®
Rds On (Max) @ Id, Vgs

14 mOhm @ 11A, 10V
Power Dissipation (Max)

2.5W (Ta)
Packaging

Cut Tape (CT)
Package / Case

8-SOIC (0.154", 3.90mm Width)
Other Names

FDS6675CT
Operating Temperature

-55°C ~ 150°C (TJ)
Mounting Type

Surface Mount
Moisture Sensitivity Level (MSL)

1 (Unlimited)
Manufacturer Standard Lead Time

26 Weeks
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds

3000pF @ 15V
Gate Charge (Qg) (Max) @ Vgs

42nC @ 5V
FET Type

P-Channel
FET Feature

-
Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V
Drain to Source Voltage (Vdss)

30V
Detailed Description

P-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C

11A (Ta)
Base Part Number

FDS6675

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