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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDU6676AS

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FDU6676AS Image

AMI Semiconductor / ON Semiconductor

FDU6676AS

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Specifications

Part Number

FDU6676AS
Manufacturer/Brand

AMI Semiconductor/onsemi
Stock Quantity

In stock
Description

MOSFET N-CH 30V 90A IPAK
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Datasheets

FDU6676AS.pdf
Vgs(th) (Max) @ Id

3V @ 250µA
Vgs (Max)

±20V
Technology

MOSFET (Metal Oxide)
Supplier Device Package

IPAK (TO-251)
Series

PowerTrench®
Rds On (Max) @ Id, Vgs

5.8 mOhm @ 16A, 10V
Power Dissipation (Max)

70W (Ta)
Packaging

Tube
Package / Case

TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature

-55°C ~ 150°C (TJ)
Mounting Type

Through Hole
Moisture Sensitivity Level (MSL)

1 (Unlimited)
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds

2470pF @ 15V
Gate Charge (Qg) (Max) @ Vgs

64nC @ 10V
FET Type

N-Channel
FET Feature

-
Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V
Drain to Source Voltage (Vdss)

30V
Detailed Description

N-Channel 30V 90A (Ta) 70W (Ta) Through Hole IPAK (TO-251)
Current - Continuous Drain (Id) @ 25°C

90A (Ta)

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