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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > FGH40T65SPD-F155
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3820174FGH40T65SPD-F155 ImageAMI Semiconductor / ON Semiconductor

FGH40T65SPD-F155

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Reference Price(In US Dollars)

In stock
1+
$4.63
10+
$4.161
450+
$3.234
900+
$2.902
1350+
$2.448
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Specifications
  • Part Number
    FGH40T65SPD-F155
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    IGBT 650V 80A 267W TO-247
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FGH40T65SPD-F155.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    650V
  • Vce(on) (Max) @ Vge, Ic
    2.4V @ 15V, 40A
  • Test Condition
    400V, 40A, 6 Ohm, 15V
  • Td (on/off) @ 25°C
    16ns/37ns
  • Switching Energy
    1.16mJ (on), 280µJ (off)
  • Supplier Device Package
    TO-247
  • Series
    -
  • Reverse Recovery Time (trr)
    34ns
  • Power - Max
    267W
  • Packaging
    Tube
  • Package / Case
    TO-247-3
  • Other Names
    FGH40T65SPD_F155
    FGH40T65SPD_F155-ND
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    35nC
  • Detailed Description
    IGBT Trench Field Stop 650V 80A 267W Through Hole TO-247
  • Current - Collector Pulsed (Icm)
    120A
  • Current - Collector (Ic) (Max)
    80A

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