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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > FJE5304D
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3961651FJE5304D ImageAMI Semiconductor / ON Semiconductor

FJE5304D

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Reference Price(In US Dollars)

In stock
1+
$0.69
10+
$0.611
100+
$0.469
500+
$0.37
1000+
$0.296
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Specifications
  • Part Number
    FJE5304D
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 400V 4A TO-126
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FJE5304D.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    400V
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 500mA, 2.5A
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-126-3
  • Series
    -
  • Power - Max
    30W
  • Packaging
    Bulk
  • Package / Case
    TO-225AA, TO-126-3
  • Operating Temperature
    -
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor NPN 400V 4A 30W Through Hole TO-126-3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    8 @ 2A, 5V
  • Current - Collector Cutoff (Max)
    100µA
  • Current - Collector (Ic) (Max)
    4A

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