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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > FJN3303RTA
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FJN3303RTA

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Reference Price(In US Dollars)

In stock
2000+
$0.039
6000+
$0.035
10000+
$0.03
50000+
$0.024
100000+
$0.023
200000+
$0.02
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Specifications
  • Part Number
    FJN3303RTA
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS NPN 300MW TO92-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FJN3303RTA.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500µA, 10mA
  • Transistor Type
    NPN - Pre-Biased
  • Supplier Device Package
    TO-92-3
  • Series
    -
  • Resistor - Emitter Base (R2)
    22 kOhms
  • Resistor - Base (R1)
    22 kOhms
  • Power - Max
    300mW
  • Packaging
    Tape & Box (TB)
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Other Names
    FJN3303RTA-ND
    FJN3303RTATB
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    2 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    250MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92-3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    56 @ 5mA, 5V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    100mA
  • Base Part Number
    FJN3303

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