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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > FJP3307DTU
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FJP3307DTU

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Reference Price(In US Dollars)

In stock
1+
$0.92
10+
$0.821
100+
$0.64
500+
$0.529
1000+
$0.418
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Specifications
  • Part Number
    FJP3307DTU
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 400V 8A TO220
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.FJP3307DTU.pdf
    2.FJP3307DTU.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    400V
  • Vce Saturation (Max) @ Ib, Ic
    3V @ 2A, 8A
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-220-3
  • Series
    -
  • Power - Max
    80W
  • Packaging
    Tube
  • Package / Case
    TO-220-3
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor NPN 400V 8A 80W Through Hole TO-220-3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    5 @ 5A, 5V
  • Current - Collector Cutoff (Max)
    -
  • Current - Collector (Ic) (Max)
    8A

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