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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > FJP3835TU
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FJP3835TU

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Specifications
  • Part Number
    FJP3835TU
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 120V 8A TO-220
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.FJP3835TU.pdf
    2.FJP3835TU.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    120V
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 300mA, 3A
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-220-3
  • Series
    -
  • Power - Max
    50W
  • Packaging
    Tube
  • Package / Case
    TO-220-3
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    30MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 120V 8A 30MHz 50W Through Hole TO-220-3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 3A, 4V
  • Current - Collector Cutoff (Max)
    100µA (ICBO)
  • Current - Collector (Ic) (Max)
    8A

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