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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > FJV3110RMTF
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FJV3110RMTF

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Reference Price(In US Dollars)

In stock
3000+
$0.039
6000+
$0.034
15000+
$0.029
30000+
$0.027
75000+
$0.026
150000+
$0.023
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Specifications
  • Part Number
    FJV3110RMTF
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS NPN 200MW SOT23-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.FJV3110RMTF.pdf
    2.FJV3110RMTF.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    40V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 1mA, 10mA
  • Transistor Type
    NPN - Pre-Biased
  • Supplier Device Package
    SOT-23-3 (TO-236)
  • Series
    -
  • Resistor - Base (R1)
    10 kOhms
  • Power - Max
    200mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Other Names
    FJV3110RMTF-ND
    FJV3110RMTFTR
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    13 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    250MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 100mA 250MHz 200mW Surface Mount SOT-23-3 (TO-236)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 1mA, 5V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    100mA
  • Base Part Number
    FJV3110

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