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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQA170N06
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4053088FQA170N06 ImageAMI Semiconductor / ON Semiconductor

FQA170N06

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Reference Price(In US Dollars)

In stock
1+
$8.58
10+
$7.721
450+
$5.834
900+
$4.907
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Specifications
  • Part Number
    FQA170N06
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 60V 170A TO-3P
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Vgs (Max)
    ±25V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-3PN
  • Series
    QFET®
  • Rds On (Max) @ Id, Vgs
    5.6 mOhm @ 85A, 10V
  • Power Dissipation (Max)
    375W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-3P-3, SC-65-3
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    6 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    9350pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    290nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    60V
  • Detailed Description
    N-Channel 60V 170A (Tc) 375W (Tc) Through Hole TO-3PN
  • Current - Continuous Drain (Id) @ 25°C
    170A (Tc)
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