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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQB8N60CTM-WS

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FQB8N60CTM-WS Image

AMI Semiconductor / ON Semiconductor

FQB8N60CTM-WS

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Specifications

Part Number

FQB8N60CTM-WS
Manufacturer/Brand

AMI Semiconductor/onsemi
Stock Quantity

In stock
Description

MOSFET N-CH 600V 7.5A
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Datasheets

FQB8N60CTM-WS.pdf
Vgs(th) (Max) @ Id

4V @ 250µA
Vgs (Max)

±30V
Technology

MOSFET (Metal Oxide)
Supplier Device Package

D²PAK (TO-263AB)
Series

QFET®
Rds On (Max) @ Id, Vgs

1.2 Ohm @ 3.75A, 10V
Power Dissipation (Max)

3.13W (Ta), 147W (Tc)
Packaging

Cut Tape (CT)
Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names

FQB8N60CTM-WSCT
FQB8N60CTM_WSCT
FQB8N60CTM_WSCT-ND
Operating Temperature

-55°C ~ 150°C (TJ)
Mounting Type

Surface Mount
Moisture Sensitivity Level (MSL)

1 (Unlimited)
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds

1255pF @ 25V
Gate Charge (Qg) (Max) @ Vgs

36nC @ 10V
FET Type

N-Channel
FET Feature

-
Drive Voltage (Max Rds On, Min Rds On)

10V
Drain to Source Voltage (Vdss)

600V
Detailed Description

N-Channel 600V 7.5A (Tc) 3.13W (Ta), 147W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C

7.5A (Tc)

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