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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQD1N80TM
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FQD1N80TM

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Reference Price(In US Dollars)

In stock
1+
$1.05
10+
$0.918
100+
$0.708
500+
$0.525
1000+
$0.42
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Specifications
  • Part Number
    FQD1N80TM
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 800V 1A DPAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.FQD1N80TM.pdf
    2.FQD1N80TM.pdf
  • Vgs(th) (Max) @ Id
    5V @ 250µA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    D-Pak
  • Series
    QFET®
  • Rds On (Max) @ Id, Vgs
    20 Ohm @ 500mA, 10V
  • Power Dissipation (Max)
    2.5W (Ta), 45W (Tc)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Other Names
    FQD1N80TMCT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    27 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    195pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    7.2nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    800V
  • Detailed Description
    N-Channel 800V 1A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount D-Pak
  • Current - Continuous Drain (Id) @ 25°C
    1A (Tc)

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