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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQE10N20LCTU
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1878550FQE10N20LCTU ImageAMI Semiconductor / ON Semiconductor

FQE10N20LCTU

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Specifications
  • Part Number
    FQE10N20LCTU
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 200V 4A TO-126
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FQE10N20LCTU.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    2V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-126
  • Series
    QFET®
  • Rds On (Max) @ Id, Vgs
    360 mOhm @ 2A, 10V
  • Power Dissipation (Max)
    12.8W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-225AA, TO-126-3
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    490pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    19nC @ 5V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    5V, 10V
  • Drain to Source Voltage (Vdss)
    200V
  • Detailed Description
    N-Channel 200V 4A (Tc) 12.8W (Tc) Through Hole TO-126
  • Current - Continuous Drain (Id) @ 25°C
    4A (Tc)

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