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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQI9N08LTU

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FQI9N08LTU Image

AMI Semiconductor / ON Semiconductor

FQI9N08LTU

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Specifications

Part Number

FQI9N08LTU
Manufacturer/Brand

AMI Semiconductor/onsemi
Stock Quantity

In stock
Description

MOSFET N-CH 80V 9.3A I2PAK
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Datasheets

FQI9N08LTU.pdf
Vgs(th) (Max) @ Id

2V @ 250µA
Vgs (Max)

±20V
Technology

MOSFET (Metal Oxide)
Supplier Device Package

I2PAK (TO-262)
Series

QFET®
Rds On (Max) @ Id, Vgs

210 mOhm @ 4.65A, 10V
Power Dissipation (Max)

3.75W (Ta), 40W (Tc)
Packaging

Tube
Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA
Operating Temperature

-55°C ~ 175°C (TJ)
Mounting Type

Through Hole
Moisture Sensitivity Level (MSL)

1 (Unlimited)
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds

280pF @ 25V
Gate Charge (Qg) (Max) @ Vgs

6.1nC @ 5V
FET Type

N-Channel
FET Feature

-
Drive Voltage (Max Rds On, Min Rds On)

5V, 10V
Drain to Source Voltage (Vdss)

80V
Detailed Description

N-Channel 80V 9.3A (Tc) 3.75W (Ta), 40W (Tc) Through Hole I2PAK (TO-262)
Current - Continuous Drain (Id) @ 25°C

9.3A (Tc)

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