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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQU2N80TU
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2104080FQU2N80TU ImageAMI Semiconductor / ON Semiconductor

FQU2N80TU

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Specifications
  • Part Number
    FQU2N80TU
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 800V 1.8A IPAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.FQU2N80TU.pdf
    2.FQU2N80TU.pdf
  • Vgs(th) (Max) @ Id
    5V @ 250µA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    I-PAK
  • Series
    QFET®
  • Rds On (Max) @ Id, Vgs
    6.3 Ohm @ 900mA, 10V
  • Power Dissipation (Max)
    2.5W (Ta), 50W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    550pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    15nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    800V
  • Detailed Description
    N-Channel 800V 1.8A (Tc) 2.5W (Ta), 50W (Tc) Through Hole I-PAK
  • Current - Continuous Drain (Id) @ 25°C
    1.8A (Tc)

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