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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQU4N20TU

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FQU4N20TU Image

AMI Semiconductor / ON Semiconductor

FQU4N20TU

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Specifications

Part Number

FQU4N20TU
Manufacturer/Brand

AMI Semiconductor/onsemi
Stock Quantity

In stock
Description

MOSFET N-CH 200V 3A IPAK
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Datasheets

FQU4N20TU.pdf
ECAD Model
Vgs(th) (Max) @ Id

5V @ 250µA
Vgs (Max)

±20V
Technology

MOSFET (Metal Oxide)
Supplier Device Package

I-PAK
Series

QFET®
Rds On (Max) @ Id, Vgs

1.4 Ohm @ 1.5A, 10V
Power Dissipation (Max)

2.5W (Ta), 30W (Tc)
Packaging

Tube
Package / Case

TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature

-55°C ~ 150°C (TJ)
Mounting Type

Through Hole
Moisture Sensitivity Level (MSL)

1 (Unlimited)
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds

220pF @ 25V
Gate Charge (Qg) (Max) @ Vgs

6.5nC @ 10V
FET Type

N-Channel
FET Feature

-
Drive Voltage (Max Rds On, Min Rds On)

5V, 10V
Drain to Source Voltage (Vdss)

200V
Detailed Description

N-Channel 200V 3A (Tc) 2.5W (Ta), 30W (Tc) Through Hole I-PAK
Current - Continuous Drain (Id) @ 25°C

3A (Tc)

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