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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQU5N60CTU
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5402188FQU5N60CTU ImageAMI Semiconductor / ON Semiconductor

FQU5N60CTU

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Reference Price(In US Dollars)

In stock
1+
$1.20
10+
$1.066
100+
$0.842
500+
$0.653
1000+
$0.516
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Specifications
  • Part Number
    FQU5N60CTU
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 600V 2.8A IPAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    I-PAK
  • Series
    QFET®
  • Rds On (Max) @ Id, Vgs
    2.5 Ohm @ 1.4A, 10V
  • Power Dissipation (Max)
    2.5W (Ta), 49W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    6 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    670pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    19nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    600V
  • Detailed Description
    N-Channel 600V 2.8A (Tc) 2.5W (Ta), 49W (Tc) Through Hole I-PAK
  • Current - Continuous Drain (Id) @ 25°C
    2.8A (Tc)
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