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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > FSB660
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FSB660

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Specifications
  • Part Number
    FSB660
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS PNP 60V 2A SSOT-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.FSB660.pdf
    2.FSB660.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Vce Saturation (Max) @ Ib, Ic
    350mV @ 200mA, 2A
  • Transistor Type
    PNP
  • Supplier Device Package
    3-SSOT
  • Series
    -
  • Power - Max
    500mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    75MHz
  • Detailed Description
    Bipolar (BJT) Transistor PNP 60V 2A 75MHz 500mW Surface Mount 3-SSOT
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 500mA, 2V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    2A
  • Base Part Number
    FSB660

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