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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > HUFA76609D3
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2311292HUFA76609D3 ImageAMI Semiconductor / ON Semiconductor

HUFA76609D3

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Specifications
  • Part Number
    HUFA76609D3
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 100V 10A TO-251AA
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    HUFA76609D3.pdf
  • Vgs(th) (Max) @ Id
    3V @ 250µA
  • Vgs (Max)
    ±16V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-251AA
  • Series
    UltraFET™
  • Rds On (Max) @ Id, Vgs
    160 mOhm @ 10A, 10V
  • Power Dissipation (Max)
    49W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    425pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    16nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    N-Channel 100V 10A (Tc) 49W (Tc) Through Hole TO-251AA
  • Current - Continuous Drain (Id) @ 25°C
    10A (Tc)

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