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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > KSD1020GTA
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3056884KSD1020GTA ImageAMI Semiconductor / ON Semiconductor

KSD1020GTA

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Specifications
  • Part Number
    KSD1020GTA
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 25V 0.7A TO-92S
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    KSD1020GTA.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    25V
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 70mA, 700mA
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-92S
  • Series
    -
  • Power - Max
    350mW
  • Packaging
    Tape & Box (TB)
  • Package / Case
    TO-226-3, TO-92-3 Short Body
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    170MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 25V 700mA 170MHz 350mW Through Hole TO-92S
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 100mA, 1V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    700mA
  • Base Part Number
    KSD1020

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