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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > KSD2012YTU
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6585918KSD2012YTU ImageAMI Semiconductor / ON Semiconductor

KSD2012YTU

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Specifications
  • Part Number
    KSD2012YTU
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 60V 3A TO-220F
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    KSD2012YTU.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 200mA, 2A
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-220F
  • Series
    -
  • Power - Max
    25W
  • Packaging
    Tube
  • Package / Case
    TO-220-3 Full Pack
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    3MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 60V 3A 3MHz 25W Through Hole TO-220F
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 500mA, 5V
  • Current - Collector Cutoff (Max)
    100µA (ICBO)
  • Current - Collector (Ic) (Max)
    3A

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