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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > KSD882YS
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3765925KSD882YS ImageAMI Semiconductor / ON Semiconductor

KSD882YS

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Reference Price(In US Dollars)

In stock
1+
$0.53
10+
$0.428
100+
$0.291
500+
$0.218
1000+
$0.164
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Specifications
  • Part Number
    KSD882YS
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 30V 3A TO-126
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    KSD882YS.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    30V
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 200mA, 2A
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-126-3
  • Series
    -
  • Power - Max
    1W
  • Packaging
    Bulk
  • Package / Case
    TO-225AA, TO-126-3
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    2 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    90MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 30V 3A 90MHz 1W Through Hole TO-126-3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    160 @ 1A, 2V
  • Current - Collector Cutoff (Max)
    1µA (ICBO)
  • Current - Collector (Ic) (Max)
    3A
  • Base Part Number
    KSD882

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