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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > KSE802STU
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5884364KSE802STU ImageAMI Semiconductor / ON Semiconductor

KSE802STU

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Specifications
  • Part Number
    KSE802STU
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN DARL 80V 4A TO-126
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    KSE802STU.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    80V
  • Vce Saturation (Max) @ Ib, Ic
    2.5V @ 30mA, 1.5A
  • Transistor Type
    NPN - Darlington
  • Supplier Device Package
    TO-126-3
  • Series
    -
  • Power - Max
    40W
  • Packaging
    Tube
  • Package / Case
    TO-225AA, TO-126-3
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-126-3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    750 @ 1.5A, 3V
  • Current - Collector Cutoff (Max)
    100µA
  • Current - Collector (Ic) (Max)
    4A

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