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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > MCH6001-TL-E
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5373651MCH6001-TL-E ImageAMI Semiconductor / ON Semiconductor

MCH6001-TL-E

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Reference Price(In US Dollars)

In stock
3000+
$0.228
6000+
$0.213
15000+
$0.21
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Specifications
  • Part Number
    MCH6001-TL-E
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS 2NPN 8V 0.15A 6MCPH
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    MCH6001-TL-E.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    8V
  • Vce Saturation (Max) @ Ib, Ic
    -
  • Transistor Type
    2 NPN (Dual)
  • Supplier Device Package
    6-MCPH
  • Series
    -
  • Power - Max
    600mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    6-SMD, Flat Leads
  • Other Names
    MCH6001-TL-E-ND
    MCH6001-TL-EOSTR
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    7 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    16GHz
  • Detailed Description
    Bipolar (BJT) Transistor Array 2 NPN (Dual) 8V 150mA 16GHz 600mW Surface Mount 6-MCPH
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    60 @ 50mA, 5V
  • Current - Collector Cutoff (Max)
    1µA (ICBO)
  • Current - Collector (Ic) (Max)
    150mA

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