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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJ11012G
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2793123MJ11012G ImageAMI Semiconductor / ON Semiconductor

MJ11012G

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Reference Price(In US Dollars)

In stock
1+
$4.33
10+
$3.887
100+
$3.185
500+
$2.711
1000+
$2.286
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Specifications
  • Part Number
    MJ11012G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN DARL 60V 30A TO-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    MJ11012G.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Vce Saturation (Max) @ Ib, Ic
    4V @ 300mA, 30A
  • Transistor Type
    NPN - Darlington
  • Supplier Device Package
    TO-204 (TO-3)
  • Series
    -
  • Power - Max
    200W
  • Packaging
    Tray
  • Package / Case
    TO-204AA, TO-3
  • Other Names
    MJ11012G-ND
    MJ11012GOS
  • Operating Temperature
    -55°C ~ 200°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    2 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    4MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN - Darlington 60V 30A 4MHz 200W Through Hole TO-204 (TO-3)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1000 @ 20A, 5V
  • Current - Collector Cutoff (Max)
    1mA
  • Current - Collector (Ic) (Max)
    30A

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