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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJ11021G
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2035792MJ11021G ImageAMI Semiconductor / ON Semiconductor

MJ11021G

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Reference Price(In US Dollars)

In stock
1+
$7.35
10+
$6.639
100+
$5.496
500+
$4.786
1000+
$4.168
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Specifications
  • Part Number
    MJ11021G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS PNP DARL 250V 15A TO-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    MJ11021G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    250V
  • Vce Saturation (Max) @ Ib, Ic
    3.4V @ 150mA, 15A
  • Transistor Type
    PNP - Darlington
  • Supplier Device Package
    TO-204 (TO-3)
  • Series
    -
  • Power - Max
    175W
  • Packaging
    Tray
  • Package / Case
    TO-204AA, TO-3
  • Other Names
    MJ11021G-ND
    MJ11021GOS
  • Operating Temperature
    -65°C ~ 200°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    2 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor PNP - Darlington 250V 15A 175W Through Hole TO-204 (TO-3)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    400 @ 10A, 5V
  • Current - Collector Cutoff (Max)
    1mA
  • Current - Collector (Ic) (Max)
    15A

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