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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJ11032G
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2552639MJ11032G ImageAMI Semiconductor / ON Semiconductor

MJ11032G

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Reference Price(In US Dollars)

In stock
1+
$10.11
10+
$9.131
100+
$7.56
500+
$6.583
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Specifications
  • Part Number
    MJ11032G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN DARL 120V 50A TO3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    MJ11032G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    120V
  • Vce Saturation (Max) @ Ib, Ic
    3.5V @ 500mA, 50A
  • Transistor Type
    NPN - Darlington
  • Supplier Device Package
    TO-3
  • Series
    -
  • Power - Max
    300W
  • Packaging
    Tray
  • Package / Case
    TO-204AE
  • Other Names
    MJ11032GOS
  • Operating Temperature
    -55°C ~ 200°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    23 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor NPN - Darlington 120V 50A 300W Through Hole TO-3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1000 @ 25A, 5V
  • Current - Collector Cutoff (Max)
    2mA
  • Current - Collector (Ic) (Max)
    50A

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