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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJD122G
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4785977MJD122G ImageAMI Semiconductor / ON Semiconductor

MJD122G

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Reference Price(In US Dollars)

In stock
1+
$0.67
75+
$0.555
150+
$0.453
525+
$0.358
1050+
$0.286
Inquiry Online
Specifications
  • Part Number
    MJD122G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN DARL 100V 8A DPAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    MJD122G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    100V
  • Vce Saturation (Max) @ Ib, Ic
    4V @ 80mA, 8A
  • Transistor Type
    NPN - Darlington
  • Supplier Device Package
    DPAK
  • Series
    -
  • Power - Max
    1.75W
  • Packaging
    Tube
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Other Names
    MJD122G-ND
    MJD122GOS
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    15 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    4MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN - Darlington 100V 8A 4MHz 1.75W Surface Mount DPAK
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1000 @ 4A, 4V
  • Current - Collector Cutoff (Max)
    10µA
  • Current - Collector (Ic) (Max)
    8A
  • Base Part Number
    MJD122

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