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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJD243T4G
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3100443MJD243T4G ImageAMI Semiconductor / ON Semiconductor

MJD243T4G

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Reference Price(In US Dollars)

In stock
1+
$0.77
10+
$0.678
100+
$0.52
500+
$0.411
1000+
$0.329
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Specifications
  • Part Number
    MJD243T4G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 100V 4A DPAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    MJD243T4G.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    100V
  • Vce Saturation (Max) @ Ib, Ic
    600mV @ 100mA, 1A
  • Transistor Type
    NPN
  • Supplier Device Package
    DPAK
  • Series
    -
  • Power - Max
    1.4W
  • Packaging
    Original-Reel®
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Other Names
    MJD243T4GOSDKR
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    6 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    40MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 100V 4A 40MHz 1.4W Surface Mount DPAK
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 200mA, 1V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    4A
  • Base Part Number
    MJD243

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