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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJD253-1G
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764880MJD253-1G ImageAMI Semiconductor / ON Semiconductor

MJD253-1G

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Reference Price(In US Dollars)

In stock
1+
$0.75
75+
$0.618
150+
$0.505
525+
$0.399
1050+
$0.319
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Specifications
  • Part Number
    MJD253-1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS PNP 100V 4A IPAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    MJD253-1G.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    100V
  • Vce Saturation (Max) @ Ib, Ic
    600mV @ 100mA, 1A
  • Transistor Type
    PNP
  • Supplier Device Package
    I-PAK
  • Series
    -
  • Power - Max
    1.4W
  • Packaging
    Tube
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Other Names
    MJD253-1G-ND
    MJD253-1GOS
    MJD2531G
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    4 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    40MHz
  • Detailed Description
    Bipolar (BJT) Transistor PNP 100V 4A 40MHz 1.4W Through Hole I-PAK
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 200mA, 1V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    4A
  • Base Part Number
    MJD253

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