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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJD45H11-001
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3458631MJD45H11-001 ImageAMI Semiconductor / ON Semiconductor

MJD45H11-001

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Specifications
  • Part Number
    MJD45H11-001
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    TRANS PNP 80V 8A IPAK
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
  • Voltage - Collector Emitter Breakdown (Max)
    80V
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 400mA, 8A
  • Transistor Type
    PNP
  • Supplier Device Package
    I-PAK
  • Series
    -
  • Power - Max
    1.75W
  • Packaging
    Tube
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Other Names
    MJD45H11-001OS
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Frequency - Transition
    90MHz
  • Detailed Description
    Bipolar (BJT) Transistor PNP 80V 8A 90MHz 1.75W Through Hole I-PAK
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 4A, 1V
  • Current - Collector Cutoff (Max)
    1µA
  • Current - Collector (Ic) (Max)
    8A
  • Base Part Number
    MJD45H11
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Description: TRANS NPN 80V 8A DPAK

Manufacturers: AMI Semiconductor / ON Semiconductor
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Description: TRANS NPN 80V 8A DPAK

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Description: TRANS NPN 80V 8A DPAK

Manufacturers: AMI Semiconductor / ON Semiconductor
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Description: TRANS PNP 80V 8A DPAK

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Description: TRANS NPN 80V 8A DPAK

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Description: TRANS NPN 80V 8A DPAK

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Description: TRANS PNP 80V 8A IPAK

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Description: TRANS PNP 80V 8A DPAK

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