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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJE13009G
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6693707MJE13009G ImageAMI Semiconductor / ON Semiconductor

MJE13009G

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Specifications
  • Part Number
    MJE13009G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 400V 12A TO220AB
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    MJE13009G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    400V
  • Vce Saturation (Max) @ Ib, Ic
    3V @ 3A, 12A
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-220AB
  • Series
    -
  • Power - Max
    2W
  • Packaging
    Tube
  • Package / Case
    TO-220-3
  • Other Names
    MJE13009GOS
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    4MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 400V 12A 4MHz 2W Through Hole TO-220AB
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    8 @ 5A, 5V
  • Current - Collector Cutoff (Max)
    -
  • Current - Collector (Ic) (Max)
    12A

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