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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJE15034G
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3199929MJE15034G ImageAMI Semiconductor / ON Semiconductor

MJE15034G

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Reference Price(In US Dollars)

In stock
1+
$1.38
50+
$1.173
100+
$0.964
500+
$0.796
1000+
$0.628
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Specifications
  • Part Number
    MJE15034G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 350V 4A TO220AB
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    MJE15034G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    350V
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 100mA, 1A
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-220AB
  • Series
    -
  • Power - Max
    2W
  • Packaging
    Tube
  • Package / Case
    TO-220-3
  • Other Names
    MJE15034GOS
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    24 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    30MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 350V 4A 30MHz 2W Through Hole TO-220AB
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    10 @ 2A, 5V
  • Current - Collector Cutoff (Max)
    10µA (ICBO)
  • Current - Collector (Ic) (Max)
    4A

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