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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJE18002G
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6814009MJE18002G ImageAMI Semiconductor / ON Semiconductor

MJE18002G

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Specifications
  • Part Number
    MJE18002G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 450V 2A TO220AB
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    MJE18002G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    450V
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 200mA, 1A
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-220AB
  • Series
    SWITCHMODE™
  • Power - Max
    50W
  • Packaging
    Tube
  • Package / Case
    TO-220-3
  • Other Names
    MJE18002GOS
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    13MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 450V 2A 13MHz 50W Through Hole TO-220AB
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    14 @ 200mA, 5V
  • Current - Collector Cutoff (Max)
    100µA
  • Current - Collector (Ic) (Max)
    2A

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