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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MMBT5550LT1G
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1596785MMBT5550LT1G ImageAMI Semiconductor / ON Semiconductor

MMBT5550LT1G

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Reference Price(In US Dollars)

In stock
1+
$0.19
10+
$0.178
100+
$0.097
500+
$0.06
1000+
$0.041
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Specifications
  • Part Number
    MMBT5550LT1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 140V 0.6A SOT23
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    MMBT5550LT1G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    140V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 5mA, 50mA
  • Transistor Type
    NPN
  • Supplier Device Package
    SOT-23-3 (TO-236)
  • Series
    -
  • Power - Max
    225mW
  • Packaging
    Original-Reel®
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Other Names
    MMBT5550LT1GOSDKR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    36 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor NPN 140V 600mA 225mW Surface Mount SOT-23-3 (TO-236)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    60 @ 10mA, 5V
  • Current - Collector Cutoff (Max)
    100nA
  • Current - Collector (Ic) (Max)
    600mA
  • Base Part Number
    MMBT5550

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