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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MMJT350T1G
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1257171MMJT350T1G ImageAMI Semiconductor / ON Semiconductor

MMJT350T1G

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Reference Price(In US Dollars)

In stock
1000+
$0.253
2000+
$0.231
5000+
$0.216
10000+
$0.201
25000+
$0.199
Inquiry Online
Specifications
  • Part Number
    MMJT350T1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS PNP 300V 0.5A SOT-223
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    MMJT350T1G.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    300V
  • Vce Saturation (Max) @ Ib, Ic
    -
  • Transistor Type
    PNP
  • Supplier Device Package
    SOT-223
  • Series
    -
  • Power - Max
    650mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-261-4, TO-261AA
  • Other Names
    MMJT350T1G-ND
    MMJT350T1GOSTR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    2 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor PNP 300V 500mA 650mW Surface Mount SOT-223
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 50mA, 10V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    500mA
  • Base Part Number
    MMJT350

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