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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > MMUN2135LT1G
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5051443MMUN2135LT1G ImageAMI Semiconductor / ON Semiconductor

MMUN2135LT1G

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Reference Price(In US Dollars)

In stock
1+
$0.13
10+
$0.115
100+
$0.063
500+
$0.039
1000+
$0.026
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Specifications
  • Part Number
    MMUN2135LT1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS PNP 246MW SOT23-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    MMUN2135LT1G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300µA, 10mA
  • Transistor Type
    PNP - Pre-Biased
  • Supplier Device Package
    SOT-23 (TO-236AB)
  • Series
    -
  • Resistor - Emitter Base (R2)
    47 kOhms
  • Resistor - Base (R1)
    2.2 kOhms
  • Power - Max
    246mW
  • Packaging
    Cut Tape (CT)
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Other Names
    MMUN2135LT1GOSCT
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    36 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23 (TO-236AB)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 5mA, 10V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    100mA

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