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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MPSA29G
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MPSA29G

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Specifications
  • Part Number
    MPSA29G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN DARL 100V 0.5A TO-92
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    MPSA29G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    100V
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 100µA, 100mA
  • Transistor Type
    NPN - Darlington
  • Supplier Device Package
    TO-92-3
  • Series
    -
  • Power - Max
    625mW
  • Packaging
    Bulk
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Other Names
    MPSA29G-ND
    MPSA29GOS
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    200MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN - Darlington 100V 500mA 200MHz 625mW Through Hole TO-92-3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    10000 @ 100mA, 5V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    500mA
  • Base Part Number
    MPSA29

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