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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF > MPSH10G
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MPSH10G

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Specifications
  • Part Number
    MPSH10G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN VHF/UHF SS 25V TO92
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    MPSH10G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    25V
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-92-3
  • Series
    -
  • Power - Max
    350mW
  • Packaging
    Bulk
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Other Names
    MPSH10GOS
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Noise Figure (dB Typ @ f)
    -
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Gain
    -
  • Frequency - Transition
    650MHz
  • Detailed Description
    RF Transistor NPN 25V 650MHz 350mW Through Hole TO-92-3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    60 @ 4mA, 10V
  • Current - Collector (Ic) (Max)
    -
  • Base Part Number
    MPSH10

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