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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > NGTB30N120IHSWG
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6557403NGTB30N120IHSWG ImageAMI Semiconductor / ON Semiconductor

NGTB30N120IHSWG

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Specifications
  • Part Number
    NGTB30N120IHSWG
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    IGBT 1200V 30A TO247
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NGTB30N120IHSWG.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Vce(on) (Max) @ Vge, Ic
    2.4V @ 15V, 30A
  • Test Condition
    600V, 30A, 10 Ohm, 15V
  • Td (on/off) @ 25°C
    -/210ns
  • Switching Energy
    1mJ (off)
  • Supplier Device Package
    TO-247
  • Series
    -
  • Power - Max
    192W
  • Packaging
    Tube
  • Package / Case
    TO-247-3
  • Other Names
    NGTB30N120IHSWG-ND
    NGTB30N120IHSWGOS
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    220nC
  • Detailed Description
    IGBT Trench Field Stop 1200V 60A 192W Through Hole TO-247
  • Current - Collector Pulsed (Icm)
    200A
  • Current - Collector (Ic) (Max)
    60A

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