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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > NGTB35N60FL2WG
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242319NGTB35N60FL2WG ImageAMI Semiconductor / ON Semiconductor

NGTB35N60FL2WG

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Reference Price(In US Dollars)

In stock
1+
$3.12
30+
$2.646
120+
$2.293
510+
$1.952
1020+
$1.646
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Specifications
  • Part Number
    NGTB35N60FL2WG
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    IGBT 600V 70A 300W TO247
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NGTB35N60FL2WG.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    600V
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 35A
  • Test Condition
    400V, 35A, 10 Ohm, 15V
  • Td (on/off) @ 25°C
    72ns/132ns
  • Switching Energy
    840µJ (on), 280µJ (off)
  • Supplier Device Package
    TO-247
  • Series
    -
  • Reverse Recovery Time (trr)
    68ns
  • Power - Max
    300W
  • Packaging
    Tube
  • Package / Case
    TO-247-3
  • Other Names
    NGTB35N60FL2WGOS
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    125nC
  • Detailed Description
    IGBT Trench Field Stop 600V 70A 300W Through Hole TO-247
  • Current - Collector Pulsed (Icm)
    120A
  • Current - Collector (Ic) (Max)
    70A

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