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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > NJL1302DG
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4542488NJL1302DG ImageAMI Semiconductor / ON Semiconductor

NJL1302DG

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Reference Price(In US Dollars)

In stock
1+
$5.25
25+
$4.455
100+
$3.861
500+
$3.287
1000+
$2.772
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Specifications
  • Part Number
    NJL1302DG
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS PNP 260V 15A TO-264
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NJL1302DG.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    260V
  • Vce Saturation (Max) @ Ib, Ic
    3V @ 1A, 10A
  • Transistor Type
    PNP + Diode (Isolated)
  • Supplier Device Package
    TO-264
  • Series
    -
  • Power - Max
    200W
  • Packaging
    Tube
  • Package / Case
    TO-264-5
  • Other Names
    NJL1302DG-ND
    NJL1302DGOS
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    19 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    30MHz
  • Detailed Description
    Bipolar (BJT) Transistor PNP + Diode (Isolated) 260V 15A 30MHz 200W Through Hole TO-264
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    75 @ 5A, 5V
  • Current - Collector Cutoff (Max)
    50µA (ICBO)
  • Current - Collector (Ic) (Max)
    15A

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