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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > NJL4281DG
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677246NJL4281DG ImageAMI Semiconductor / ON Semiconductor

NJL4281DG

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Specifications
  • Part Number
    NJL4281DG
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 350V 15A TO264
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NJL4281DG.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    350V
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 800mA, 8A
  • Transistor Type
    NPN + Diode (Isolated)
  • Supplier Device Package
    TO-264
  • Series
    -
  • Power - Max
    230W
  • Packaging
    Tube
  • Package / Case
    TO-264-5
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    35MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN + Diode (Isolated) 350V 15A 35MHz 230W Through Hole TO-264
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 5A, 5V
  • Current - Collector Cutoff (Max)
    100µA
  • Current - Collector (Ic) (Max)
    15A

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