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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > NJVMJD2955T4G
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1081503NJVMJD2955T4G ImageAMI Semiconductor / ON Semiconductor

NJVMJD2955T4G

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Reference Price(In US Dollars)

In stock
2500+
$0.215
5000+
$0.201
12500+
$0.187
25000+
$0.185
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Specifications
  • Part Number
    NJVMJD2955T4G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS PNP 60V 10A DPAK-4
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NJVMJD2955T4G.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Vce Saturation (Max) @ Ib, Ic
    8V @ 3.3A, 10A
  • Transistor Type
    PNP
  • Supplier Device Package
    DPAK
  • Series
    -
  • Power - Max
    1.75W
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Other Names
    NJVMJD2955T4G-ND
    NJVMJD2955T4GOSTR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    2 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    2MHz
  • Detailed Description
    Bipolar (BJT) Transistor PNP 60V 10A 2MHz 1.75W Surface Mount DPAK
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    20 @ 4A, 4V
  • Current - Collector Cutoff (Max)
    50µA
  • Current - Collector (Ic) (Max)
    10A
  • Base Part Number
    MJD2955

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