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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > NJVMJD112G
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4867128NJVMJD112G ImageAMI Semiconductor / ON Semiconductor

NJVMJD112G

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Reference Price(In US Dollars)

In stock
825+
$0.393
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Specifications
  • Part Number
    NJVMJD112G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN DARL 100V 2A DPAK-4
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NJVMJD112G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    100V
  • Vce Saturation (Max) @ Ib, Ic
    3V @ 40mA, 4A
  • Transistor Type
    NPN - Darlington
  • Supplier Device Package
    DPAK
  • Series
    -
  • Power - Max
    1.75W
  • Packaging
    Tube
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    5 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    25MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Surface Mount DPAK
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1000 @ 2A, 3V
  • Current - Collector Cutoff (Max)
    20µA
  • Current - Collector (Ic) (Max)
    2A

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