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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > NJW0281G
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6217118NJW0281G ImageAMI Semiconductor / ON Semiconductor

NJW0281G

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Reference Price(In US Dollars)

In stock
1+
$2.63
30+
$2.231
120+
$1.901
510+
$1.562
1020+
$1.294
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Specifications
  • Part Number
    NJW0281G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 250V 15A TO-3P
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NJW0281G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    250V
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 500mA, 5A
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-3P-3L
  • Series
    -
  • Power - Max
    150W
  • Packaging
    Tube
  • Package / Case
    TO-3P-3, SC-65-3
  • Other Names
    NJW0281G-ND
    NJW0281GOS
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    18 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    30MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 250V 15A 30MHz 150W Through Hole TO-3P-3L
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    75 @ 3A, 5V
  • Current - Collector Cutoff (Max)
    10µA (ICBO)
  • Current - Collector (Ic) (Max)
    15A

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