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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > NSBA123EF3T5G
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3987632NSBA123EF3T5G ImageAMI Semiconductor / ON Semiconductor

NSBA123EF3T5G

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Reference Price(In US Dollars)

In stock
8000+
$0.098
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Specifications
  • Part Number
    NSBA123EF3T5G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS DUAL PNP
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NSBA123EF3T5G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 5mA, 10mA
  • Transistor Type
    PNP - Pre-Biased
  • Supplier Device Package
    SOT-1123
  • Series
    -
  • Resistor - Emitter Base (R2)
    2.2 kOhms
  • Resistor - Base (R1)
    2.2 kOhms
  • Power - Max
    254mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SOT-1123
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    13 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 254mW Surface Mount SOT-1123
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    8 @ 5mA, 10V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    100mA

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