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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > NSBC114YDXV6T1G
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1898504NSBC114YDXV6T1G ImageAMI Semiconductor / ON Semiconductor

NSBC114YDXV6T1G

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Reference Price(In US Dollars)

In stock
1+
$0.40
10+
$0.30
100+
$0.17
500+
$0.113
1000+
$0.086
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Specifications
  • Part Number
    NSBC114YDXV6T1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS 2NPN PREBIAS 0.5W SOT563
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NSBC114YDXV6T1G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300µA, 10mA
  • Transistor Type
    2 NPN - Pre-Biased (Dual)
  • Supplier Device Package
    SOT-563
  • Series
    -
  • Resistor - Emitter Base (R2)
    47 kOhms
  • Resistor - Base (R1)
    10 kOhms
  • Power - Max
    500mW
  • Packaging
    Original-Reel®
  • Package / Case
    SOT-563, SOT-666
  • Other Names
    NSBC114YDXV6T1GOSDKR
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    2 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    -
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 5mA, 10V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    100mA
  • Base Part Number
    NSBC1*

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